论文

对取向硅钢在不同气氛下的高温退火工艺进行实验室模拟，利用X射线衍射仪（XRD）分析了硅钢退火至900℃和1170℃时的样品表面氧化层和底层的物相组成，采用场发射扫描电镜（SEM）观察了样品表面氧化层和底层在截面方向上的微观形貌特征，并计算了高温退火一次升温阶段氧化反应的吉布斯自由能以及900℃时退火气氛的氧分压。结果表明：当退火气氛的露点温度保持一定时，较高的氢气含量有利于生成完整连续的底层；当退火气氛的水氢分压比保持一定时，在露点温度与氢气含量两者较低的条件下，底层附着性不佳易脱落，较高条件下，底层中夹杂着较多的铁单质；当氧化层中无FeO时，底层完整连续但易脱落，当FeO层较薄时，底层下方存在部分未反应的SiO₂,当FeO层较厚时，底层不完整连续且有分层。 The high temperature annealing process of grain-oriented silicon steel in different atmospheres was simulated in the laboratory. X-ray diffractometer（XRD） was used to analyze the phase compositions of the surface oxide layer and forsterite film of the silicon steel annealed to 900 ℃ and 1170 ℃. Field-emission scanning electron microscopy（SEM） was used to observe the micro morphology characteristics of the surface oxide layer and forsterite film of the samples in the cross section direction. The ... 

以构建高磁感、低铁损、免轧制高硅电工钢铁芯为出发点,提出采用单辊甩带制备非晶铁硅合金薄带、微氧化法在铁硅合金粉末表面包覆高电阻率铁硅氧化物薄膜制备核壳异质结构高硅电工钢纳米粉末、放电等离子烧结快速成形制备颗粒间绝缘的高硅电工钢铁芯。研究了不同氧化包覆时间对SPS烧结试样密度、物相组成、微观结构和静磁性能的影响。研究表明,在氧化包覆5h烧结温度800℃工艺条件下,制备的6.5%Si高硅电工钢铁芯的静磁性能最佳,饱和磁化强度为128.84A.m2/kg、矫顽力为2.25kA/m、剩磁为3.47A.m2/kg。其饱和磁化强度与粉末压延法制备的高硅钢相当,但矫顽力降低了1/3。 The paper takes preparation 6.5%Si steel with high induction,low core loss and removing rolling as the starting point,amorphous Fe-Si ribbons was synthesized by melt spinning method,6.5%Si steel nanopowders with high resietivity core shell structure was prepared by the slight oxidation process and 6.5% Si steel iron core with evaluating internal was sintered by spark plasma sintering process(SPS).The essay focuses studies the effects of different oxidation cladding time on sample density,phase c... 

采用节能、环保、经济型的生产技术与工艺来制造高磁感取向硅钢目前已成为世界各大取向硅钢生产厂的研发热点。总结了国内外各大钢铁企业与研究机构采用低温板坯加热技术生产高磁感取向硅钢的开发及应用情况,概括了传统流程实现低温板坯加热技术的方法。介绍了薄板坯连铸连轧与双辊薄带连铸等短流程工艺生产高磁感取向硅钢的研发现状。在此基础上,探讨了高磁感取向硅钢生产技术与工艺的发展趋势及方向。 Utilizing energy-efficient,environmentally friendly,economic production processes and technologies to manufacture high magnetic induction grain-oriented silicon steel has become the focus of current research work.Based on using low-temperature slab reheating techniques to produce high magnetic induction grain-oriented silicon steel at both iron and steel enterprises and research institutions all over the world,the current application and exploitation was thoroughly generalized;the implementation... 

利用电子探针面分析、状态分析及电子背散射衍射相分析技术研究硅钢高温氧化铁皮的显微结构。电子探针面分析可以直观的看出元素的分布状态,初步判断氧化铁皮的结构,而状态分析可以准确表征常规氧化铁皮中铁元素的状态,对于合金元素富集区域则通过电子背散射衍射相分析技术来标定。结果表明,高温氧化铁皮的结构主要有4层,即最外层为厚度约为10μm的Fe2O3相,次外层为Fe3O4相,中间层为FeO相上分布有颗粒状的Fe3O4相,最内层为FeO相和Si元素富集的Fe2SiO4相。其中Fe2SiO4层的分布特征与加热温度密切相关:1 100℃时,Fe2SiO4相呈颗粒状,弥散分布在FeO层;1 200℃时,Fe2SiO4相呈液态,侵入基体和疏松的FeO层,且沿着FeO晶界呈网状分布。 The microstructure of high temperature oxide scale on silicon steel was characterized by electron probe microanalyzer(EPMA)mapping analysis,state analysis and electron backscatter diffraction(EBSD)phase analysis.The element distribution and the initial structure of the oxide scale could be detected by EPMA mapping analysis apparently.And the state of iron in the conventional oxide scales could be determined by state analysis.Meanwhile,the alloy-rich region could be identified by EBSD phase analy... 

对取向硅钢熔融态钢液进行处理,对比研究了不同脉冲参数的作用效果。结果表明,电脉冲对钢锭晶粒组织具有明显的细化作用,凝固组织等轴晶比例大幅上升。在脉冲电容、频率、处理时间和电压中,影响等轴晶比例的最显著性因素为脉冲频率;最优正交实验参数为:电容1 200μF,脉冲频率1 Hz,处理时间5 s,脉冲电压800 V;随着输入能量的增大,等轴晶率先增大后减小,脉冲输入能量为某值时,等轴晶率最大,通过经典形核理论和热力学对这一现象进行了解释。 Research on the influence of the electric pulse on the solidification structure of oriented silicon steel was preformed.Electric pulses in different parameters were applied to molten steel and results were compared.The result shows that solidification structure of oriented silicon steel can be improved by the electric pulse,and the equiaxed crystal ratio increases obviously.Among the four parameter factors of electric capacity,frequency,applied time and voltage,the most effective factor is frequ... 

对RH法(真空循环脱气法)生产的冷轧硅钢的脱硫原理及影响因素进行了分析研究。研究表明:降低顶渣中FeO、MnO的含量,提高钢液温度,增加脱硫剂的加入量并延长其循环时间有利于提高脱硫效率。 The principles of desulfurization and its influence factors of cold rolling silicon steel during RH process have been studied in this paper.The result indicated that reducing contents of FeO and MnO,rising temperature of the liquid steel,increasing quantity of desulfurizer,lengthening cycle time of desulfurzer are benefit for desulfurization. 

两炉次无取向硅钢XG800WR（/%:0.003～0.004C、0.71～0.75Si、0.32～0.33Mn、0.004～0.007S、0.016P）的炼钢流程为铁水预处理（KR）-210 t顶底复吹转炉-钢包吹氩-RH脱碳精炼-230mm×1220 mm板坯连铸。53 t中间包钢水过热度为25～30℃,钢包到中间包采用长水口全程吹氩保护浇铸,中间包至结晶器采用浸入式水口浇铸。结果表明,在RH、中间包、结晶器过程中钢中总氧以及夹杂物数量和尺寸均明显降低;但在钢包到中间包过程T[O]、[N]和钢中夹杂物数量增加,说明长水口浇铸过程存在二次氧化。连铸坯中T[O]、[N]平均他分别为11×10^-6和30×10^-6,显微夹杂物数量平均为4个/mm²。铸坯中的显微夹杂物主要为3～5μm的AlN,同时存在少量的MnS、Al₂O₃·AlN和Al₂O₃·MgO·MnS。 The steelmaking flow sheet for two heats non-oriented silicon steel XG800WR（/%:0.003～0.004C. 0.71～0.75Si,0.32～0.33Mn,0.004～0.007S,0.016P） is hot metal pretreatment（KR）-210 t top and bottom combined blown converter-ladle argon blowing-RH decarburization refining-230 mm×1 220 mm slab casting.The superheating extent of liquid in 53 t tundish is 25～30℃,whole casting is shielded by blowing argon with long nozzle from ladle to tundish and the submerged nozzle is adopted in casting from tundish to mold... 

【作者】 潘恒韬； 欧阳帆； ...

【作者】 杨佳直； ...

针对硅钢连续生产线设备存在的故障、隐患以及精度等影响产品质量的问题进行分析及改造,实现保证生产线设备稳定运行、提高设备精度及硅钢产品质量的目的。 This paper analyzes and transforms the electrical equipment failures, risks existed in slicon continuous production line, and the effect of accuracy to product quality, in order to ensure stable operation of equipment in production line and improve the accuracy of device, quality of silicon. 

【摘要】 <正>编号:2012016获奖等级:特等完成单位:...

采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r...