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为提高无取向硅钢导磁性能,研究了不同剪切方式对无取向硅钢剪切处磁畴结构的影响。利用纳米磁流体观测无取向硅钢剪切后边部磁畴结构。结果表明,硅钢无论在机械剪切还是线切割后的边部磁畴都会发生不同程度的改变:线切割对边部磁畴结构改变较小,边部磁畴分布均匀且连续,在距边缘0~20μm范围内出现磁畴宽度变小现象;机械剪切对磁畴的改变较为严重,剪切处磁畴零乱且不连续,在距边缘20μm处仍难以观察到完整的磁畴结构。 The effects of different shearing modes on magnetic domain structure of cold rolled non-oriented silicon steel are studied in this paper.The magnetic domain of cold rolled non-oriented silicon steel is observed by nanometer magnetic fluid pattern method.The results show that the edge magnetic domain structure will be changed by mechanical shear and wire-electrode cutting,the variation of edge magnetic domain structure wire-electrode cutting edge is very small,the magnetic domain structure is wel... 
2012-04-28 181 5.8

研究了硼酸对以Al(H2PO4)3为基料的无铬无取向硅钢绝缘涂层各项性能的影响。用盐雾实验、动电位极化及交流阻抗等试验手段研究了不同硼酸含量对硅钢绝缘涂层的耐蚀性和电化学行为的影响,同时采用SEM对涂层的表面形貌进行了研究。结果表明,硼酸含量为9.7%时,涂层的耐盐雾性及电化学性能最好;硼酸含量过少或过多时,涂层的耐蚀性和电化学性能都较差。 Influence of boric acid on the performance of chromium-free non-oriented silicon steel insulating coating based on aluminum dihydrogen phosphate was investigated.Salt spray experiment,potentiodynamic polarization and electrochemical impedance spectroscopy were used to study the influence of boric acid content on the corrosion resistance and electrochemical behavior of the insulation coating of silicon steel.Surface morphologies of the coatings were tested by SEM.Result shows that when the boric ... 
2013-05-28 188 5.8

【摘要】 <正>编号:2012016获奖等级:特等完成单位:...
2012-11-28 194 5.8

采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r... 
2013-01-28 194 5.8

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