论文

主要研究了氧化锌对以Al(H2PO4)3为基料的无铬无取向硅钢绝缘涂层各项性能的影响.用盐雾实验和动电位极化研究了不同氧化锌含量对硅钢绝缘涂层的耐蚀性和电化学行为的影响.采用SEM和体视显微镜对涂层的表面形貌和附着性能进行研究.结果表明,氧化锌含量为4.0%时,氧化锌能完全中和涂层表面的游离磷酸,涂层的耐蚀性和附着性最好;氧化锌含量过少或过多时,涂层的耐蚀性和附着性都较差. This paper studies the influence of zinc oxide on the performance of chromium-free non-oriented silicon steel insulating coating which based on aluminum dihydrogen phosphate.Salt spray experiment and potentiodynamic polarization were used to study the influence of zinc oxide content on the corrosion resistance and electrochemical behavior of the insulation coating of silicon steel.The surface morphology and adhesion of coating were tested by SEM and stereo microscope.The results show that when t... 

阐述了国内外高磁感取向硅钢的生产研究水平与发展趋势,包括通过提高高斯晶粒取向度、细化磁畴、涂覆张力涂层、减薄钢片厚度进一步降低铁损以及低温加热技术和短流程技术新工艺。分析高磁感取向硅钢在我国大型电力变压器上的应用情况,结果表明,发展更薄规格高磁感、低铁损、低磁致伸缩取向硅钢可为大型变压器的安全性、节能性及环保性提供有效保障。 The research progress and development trend of high magnetic induction grain-oriented silicon steel at home and abroad are summarized,including the technology of improving the Goss alignment,refining domain wall,adding stress coating,decreasing thickness of sheet,and the new technique of reducing heating temperature of casting slab and shortening operational.Moreover,the application of high magnetic induction grain-oriented silicon in power transformer is presented.Developing grain-oriented sili... 

含铜抑制剂作为取向硅钢的主抑制剂或辅助抑制剂不仅可以抑制初次晶粒的长大,促进二次再结晶,还可以降低铸坯的加热温度。取向硅钢中主要抑制剂为10～50 nm Cu₂S,在钢的铸坯、热轧、冷轧、脱碳等工艺过程均可析出;（Cu,Mn）_1.8S、Cu_1.8S、ε-Cu等主要作为辅助抑制剂,尺寸一般为30～50 nm（或大于50 nm）,主要在热轧阶段析出。总结了国内外有关取向硅钢中含铜抑制剂析出行为的研究进展,当前主要研究不同生产流程和工序中含铜抑制剂的析出行为和作用机理。 As main inhibitor or auxiliary inhibitor for grain-oriented silicon steel,the particles of inhibitor bearing copper not only inhibit the primary crystal growing and promote the secondary recrystallization,but also decrease the heat temperature of casting slab.The main inhibitor for grain-oriented silicon steel is 10～50 nm Cu₂S,which precipitate in process and procedure including steel casting slab,hot rolling,cold rolling and decarburizing process,while the 30～50 nm or more than 50 nm... 

【作者】 朱凤泉； 黄生银； ...