硅钢资料

利用X-射线衍射织构分析和线形分析技术测定了交叉轧制双取向硅钢在制备工艺各阶段的织构及微结构,进而探讨了立方织构({100}<001>)的形成过程。通过对实验结果的分析可知,二次冷轧和交叉轧制工艺为立方织构提供了内能优势和有利的形变织构,而低温预退火工艺既强化了立方织构的内能优势,又为立方织构的异常长大提供了有利的组织保证,最终在抑制剂(AlN和MnS)的协同作用下,硅钢在二次再结晶退火后形成了强烈的立方织构。 The texture and substructure of the double oriented electrical steels produced by the cross rolling technology during the difference process has been measured by means of the X-ray texture and diffraction peak profile analysis technology,and research the formation mechanism of cube texture,{100}<001>.The results show that the dominances of inner energy and deformation texture were supplied by secondary cold rolling and the cross rolling technology and strengthened by pre-annealing at a low... 

【作者】 安斌； ...

【摘要】 <正>2014年5月9日,从武钢硅钢事业部获悉,...

对取向硅钢在不同气氛下的高温退火工艺进行实验室模拟，利用X射线衍射仪（XRD）分析了硅钢退火至900℃和1170℃时的样品表面氧化层和底层的物相组成，采用场发射扫描电镜（SEM）观察了样品表面氧化层和底层在截面方向上的微观形貌特征，并计算了高温退火一次升温阶段氧化反应的吉布斯自由能以及900℃时退火气氛的氧分压。结果表明：当退火气氛的露点温度保持一定时，较高的氢气含量有利于生成完整连续的底层；当退火气氛的水氢分压比保持一定时，在露点温度与氢气含量两者较低的条件下，底层附着性不佳易脱落，较高条件下，底层中夹杂着较多的铁单质；当氧化层中无FeO时，底层完整连续但易脱落，当FeO层较薄时，底层下方存在部分未反应的SiO₂,当FeO层较厚时，底层不完整连续且有分层。 The high temperature annealing process of grain-oriented silicon steel in different atmospheres was simulated in the laboratory. X-ray diffractometer（XRD） was used to analyze the phase compositions of the surface oxide layer and forsterite film of the silicon steel annealed to 900 ℃ and 1170 ℃. Field-emission scanning electron microscopy（SEM） was used to observe the micro morphology characteristics of the surface oxide layer and forsterite film of the samples in the cross section direction. The ... 

【作者】 周威； 刘侃； ...

无取向硅钢特别是中牌号以上的无取向硅钢,随着含硅量的提高,常温下塑性较差,冷轧过程中轧制力明显提高,如果存在原料质量问题,极易发生断带事故,影响硅钢冷轧过程的成材率和生产效率。通过优化冷轧工艺参数,可提高冷轧稳定性。生产中通过合理分配冷轧各道次压下量和轧制速度,保证了轧制过程的稳定,很大程度减少了冷轧断带事故的发生。 Non-oriented silicon steel, especially in the low and middle grade, with the increase of silicon content, plasticity is poor at room temperature, rolling force in cold rolling process significantly improved .If there is the quality defect of raw materials , easily sheet is rolling off. Affect finished product rate and production efficiency in process of cold-rolled silicon steel. Through optimization of cold rolled process parameter , improve the stability of cold-rolling process. Through reason... 

研究了退火温度对3.1%Si无取向硅钢组织和磁性能的影响规律。结果表明:退火温度从940℃提高至1 000℃,平均晶粒尺寸由98μm增加到145μm,铁损P_1.5/50从2.576 W/kg降低至2.408W/kg。随着退火温度的升高,γ不利织构组分强度逐渐降低,{111}〈112〉织构组分强度降低约16%,磁感B₅₀逐渐升高,磁性能水平提高。 The effects of annealing temperature on microstructure and texture and magnetic properties of 3.1%Si non-oriented silicon steel were investigated in this paper.The results showed that,when the annealing temperature increased from 940℃ to 1 000℃,the average grain size of metallographic structure increased from 98μm to 145μm,the iron loss value P_1.5/50 decreased from2.576 W/kg to 2.408 W/kg.And as the annealing temperature increased,the strength of the unfavorable texture componentγgrad... 

对无取向硅钢炼钢全流程钢液增钛的原因进行了分析,认为铁水钛含量、转炉出钢温度、转炉下渣量、精炼渣TiO₂含量、钢水罐及RH浸入管混钢种生产是影响钢液增钛的主要原因。通过采取低钛铁水冶炼,减少转炉下渣量,提高出钢温度,添加白灰改质精炼渣等措施,均能够降低钢液中的钛含量。 After analyzing the causes leading to increased content of titanium in molten nonoriented silicon steel during whole steelmaking process, it was concluded that such factors as content of titanium in hot metal, tapping temperature from converter, quantity of roughing slag entered into the ladle from converter, content of TiO₂ in refining slag, molten steel ladle car,carrying out the steelmaking of different steel grades by the same ladle and same RH immersion tube were the main causes ... 

研究了退火温度和退火时间对电沉积硅钢试样中的断面层组织、硅在试样中的分布情况、织构分布和磁性能的影响。结果表明:退火温度为1000℃、退火时间为210 min时得到的试样晶粒分布均匀、硅在试样中分布均匀、硅平均浓度为6.3715%(接近6.5%)。试样的织构分析及磁性能检测的结果表明,在较高温度下延长退火时间可增加{100}和{110}面织构,降低铁损,所得试样的磁性能较为良好。 The effect of annealing temperature and time on the microstructure, distribution of silicon,texture and magnetism of the high silicon steel prepared by electrodeposition was investigated. The results showed that after annealing at 1000℃ for 210 min, the mean grain size of steel was about 190 μm with a uniform grain size distribution, and the silicon is also uniformly distributed on the entire cross section with an average Si concentration 6.3715%(close to 6.5%); With the increasing annealing tim... 

采用双辊薄带连铸工艺制备了厚度为2.4mm的3.98%Si-0.71%Al无取向硅钢带,经常化、冷轧、不同温度退火后,对其显微组织、析出物、织构和磁性能进行了检测分析。结果表明:随着退火温度的提高,退火板晶粒尺寸增大,组织均匀性提高;退火板析出物主要是AlN和MnS与AlN复合析出物,尺寸较粗大,达0.5~2.5μm;退火板织构沿厚度方向变化明显,表层和1/2层存在较强的{100}织构,1/2层还存在较强的{111}织构,1/4层主要是{112}织构;随退火温度的升高相应的铁损和磁感应强度均降低。 Using twin roll thin strip continuous casting technique,the 3.98%Si-0.71%Al no-oriented silicon steel strip in thickness of 2.4mm was produced.The microstructure,precipitates,texture,and magnetic properties of the sheet after normalizing,cold rolling and annealing at different temperatures were studied.The results show that with annealing temperature increase,the grain size and uniformity of annealed sheet increased.The main precipitates in coarse size of 0.5-2.5μm in annealed sheet were AlN and... 

研究了CSP工艺流程生产的硅含量为1.5%的无取向电工钢在不同常化温度下对磁性能的变化。研究结果表明:随着常化温度的提高,热轧板的晶粒尺寸增大,且组织均匀性提高;此外成品的有利织构组分{100}<0vw>、α、η增强,不利织构组分减弱;铁损P1.5/50呈下降趋势,磁感B50上升平缓。在常化工艺为970℃×2.5min下,对应的铁损P1.5/50<3.4W/kg,磁感B50>1.74T。 The effect of normalizing temperature on the magnetic properties of non-oriented electrical steel containing 1.5%silicon produced by CSP process was studied.The results show that with increasing normalizing temperature,the average grain size of hot-rolled plate increases and the microstructure uniformity is improved.Furthermore,the texture components of finished products are improved through enhancing of{100}<0vw>,αandηtextures and weakening of{111}<112>texture;the core loss P1.5/50 ... 

试验了通过NaCl-KCl-NaF-SiO₂熔盐在电流密度50 mA/cm²、电沉积脉冲电流正反向比9:1和750⁸50℃60min电沉积下阴极（/mm）20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布,并通过计算得出Si的扩散系数。结果表明,电沉积温度由750℃提高至850℃时,试样中Si含量增加,扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。 The distribution of silicon at cross section of cathode（/mm） 20 × 20 × 0.5 sheet of 1.6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO₂ molten salt with current intensity 50 mA/cm²,electro-deposit pulse current positive-negative ratio 9:1 at 750 850 ℃ for 60 min has been tested and the diffusion coefficient of Si is obtained by calculation.Results show that with increasing electro-deposit temperature from 750 ℃ to 85...