硅钢资料

以水氯镁石为原料,采用氨法沉镁-煅烧-添加剂的方法制备硅钢级氧化镁。考察了反应温度、反应pH值、陈化时间对中间体氢氧化镁纯度及转化率的影响;研究了煅烧温度和煅烧时间对氧化镁水化率的影响及添加剂的量对氧化镁悬浮性能的影响。控制实验条件为:反应温度55℃,pH值为9.5,陈化时间2h,煅烧温度1050℃,煅烧时间2h,添加剂量为0.8%,制得氧化镁的纯度为98.99%、水化率为2.92%、悬浮性能为3mm/h,达到硅钢级氧化镁的要求。 Using bischofite as raw material,the preparation of magnesium oxide with silico-steel grade was studied.The effects of reaction temperature,reaction pH value and aging time on the intermediate magnesium hydroxide purity and conversion rate were studied.Calcinations temperature,calcinations time relationship to the hydration rate of MgO and amount of additive to the suspension performance of MgO were investigated.The results indicated that the optimum technological conditions were as follows:reac... 

用还原分离-原子荧光光谱法分析了硅钢中的痕量汞.分析方法的不确定度主要来自测量重复性,样品溶液浓度,工作曲线变动性,标准溶液,移取、配制标准溶液,仪器变动性等.文章分别对上述构成合成不确定度大小的分量进行了计算讨论. Trace mercury in silicon steel and galvanized sheet was analyzed by adopting reduced separation-atomic fluorescence spectrometry.The uncertainty of the analysis method mainly comes from measurement repeatability,sample concentration,working curve volatility,standard solution,pipetting and preparation of standard solution,and instrument variability,etc.The essay conducted all calculations and discussions on the above components that determine uncertainty. 

在实验室试制了TSCR流程的低碳低硅无取向硅钢,研究了在850～1050℃不同温度常化对冷轧量0.5mm厚钢板再经950℃×7min退火后的组织、织构和磁性能的影响。结果表明:随常化温度的升高,使热轧板晶粒尺寸增大,晶界更清晰,组织均匀性更好;由于第二相AlN和MnS析出物尺寸比较大,使冷轧退火后钢板晶粒也随常化温度升高呈单调增大趋势;γ有利织构和{111}、{112}不利织构与常化温度升高同时增强,但前者增强更多;冷轧板退火后铁损随常化温度升高呈单调下降,磁感呈单调上升趋势。 The low-carbon and low-silicon non-oriented silicon steel was prepared by thin slab casting and rolling(TSCR) in lab.The effect of normalizing at different temperatures in 850-1 050℃on microstructure, texture and magnetic properties of 0.5 mm cold-rolled sheets after annealing at 950℃for 7 min was researched. The results show that with increasing the normalizing temperature,the grain size of hot-rolled sheets increased,the grain boundaries were more clear and the rnicrostructure uniformity was b... 

利用背散射衍射技术(EBSD)和XRD,研究了两段式脱碳退火工艺对取向硅钢纵截面初次再结晶的微区取向、取向差分布、特殊晶界(CSL)及高温退火试样高斯织构。分析了初次再结晶晶界特征对取向硅钢高温退火后宏观织构的影响。结果表明:初次再结晶的纵截面基体中Σ3和Σ5晶界使得高斯晶粒有着较高的迁移率,在高温退火时借助20o～45°的大角度晶界的界面能吞并周围{111}<112>晶粒迅速长大,形成密度水平较高的高斯织构。 Micro area orientation of primary recrystallization,the misorientation distribution,special boundaries under different two-stage decarburization annealing and the Goss texture under high temperature annealing the longitudinal section of grain-oriented silicon steel were detected by electron back scattering diffraction(EBSD) and X-ray diffraction(XRD).The effect of primary recrystallization grain boundary on macrotexture after high temperature annealing was analyzed.The results show that the Σ3 a... 

为进行磷酸盐系无铬无取向硅钢涂层烧结固化工艺研究,首先对磷酸盐系无铬无取向硅钢涂层进行热重-差示扫描量热(TG-DSC)分析;然后在不同烧结固化温度条件下,测定涂层板温随时间变化曲线;最终获得涂层烧结固化温度与时间(T-t)工艺曲线。通过中性盐雾试验、动电位极化、交流阻抗、涂层附着力以及扫描电子显微镜(SEM)和能谱(EDS)分析验证。结果表明,根据涂层烧结固化温度与时间(T-t)工艺曲线制备的涂层结构致密、性能优异,证明该工艺曲线具有合理性与正确性。 In order to study the curing process of chromium-free non-oriented silicon steel coatings,phosphatic chromium-free non-oriented silicon steel insulating coating was prepared and TG-DSC analysis of the coating was conducted,then the change of the actual temperature of the coated non-oriented silicon steel sheet with time at different curing temperatures was studied. Based on the experiments,the processing curves of curing temperature vs. curing time( T-t) for the chromium-free non-oriented silico... 

针对本钢薄板坯铸机在生产无取向电工硅钢的过程中存在的铸坯拉断、中包增碳、增氮等问题,进行了连铸工艺优化。通过采用新型无碳中间包覆盖剂、环保中间包干式料及专用结晶器保护渣后,降低了铸坯增碳量;通过控制钢包到中间包的增氮环节,降低钢水增氮;适当增大二冷水量,控制钢水过热度,防止铸坯拉断等生产事故的发生。改进工艺后,精炼后到成品铸坯的平均增碳量能控制在10×10-6以内,平均增氮量能控制在4×10-6以内。 The technology optimization has been adopted for preventing nitrogen increasing and carbon increasing in Benxi thin slab producing non-oriented silicon steel.Measures accordingly were adopted and satisfactory results were achieved. 

【作者】 程志明； ...

概述了无抑制剂法生产取向电工钢的特性及其用途;总结无抑制剂生产取向电工钢的原理及工艺方案.重点讨论了成分方案,即元素对磁性能的影响和最终高温退火方案对二次再结晶的影响.研究结果表明,无抑制剂取向硅钢化学成分范围没有普通取向硅钢和高磁感取向硅钢严格,提高了成材率;最终高温退火决定了二次再结晶的好坏,从而最终决定成品磁性能,最佳的高温退火温度在850～950℃之间. This article provides an overview on the characteristics and uses of inhibitorless process producing grain-oriented electrical steels.The mechanism of inhibitorless process and technology programs were discussed.The results show that the chemical composition and final annealing were determined according to magnetic properties.The inhibitor-free grain oriented silicon steel has loose range of chemical composition;Secondary recrystallization occurs mainly in the final annealing and the best anneal... 

介绍了电工钢生产线连退机组的表面处理工艺,特别是电解清洗系统的工作机理、设备构造、生产工艺及各种影响因素。 This paper introduces the technology of surface treatment of continuous annealing unit in electrical steel production line,in particular the working mechanism,structure of equipment,production techniques and various influence factors of the electrolytic cleaning system. 

【作者】 宋波； 朱一知； ...

研究了冷轧95%变形量无取向硅钢不同退火温度(710～1 050℃)下再结晶织构特征.再结晶刚完成时(710℃退火),呈现强γ({111<112>～<134>)与弱{114}<481>织构特征;随退火温度升高至900℃,γ明显减弱,{114}<481>组分持续增强,形成典型的{h,1,1}<1/h,1,2>织构;进一步升温至1 050℃,再结晶织构不再发生明显变化.基于EBSD分析,{114}<481>组分的持续强化可归因于其明显的尺寸优势以及较高频率的高能晶界(取向差角为20°～45°). A non-oriented silicon steel was heavily rolled to 95% reduction and subsequently annealed at 710~1 050 ℃ to investigate recrystallization texture evolution.When annealed at 710 ℃ with complete recrystallization,the texture is characterized by a strong partial γ fiber spreading from {111}<112> to {111}<134> and a weak {114}<481> component.As annealing at 900 ℃,γ fiber is decreased significantly while {114}<481> is increased consistently,producing a typical {h,1,1}<1/h,... 

采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r...