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通过实验室25 kg真空感应炉冶炼和锻轧研究了0.26%~0.95%Al含量对0.5 mm 2.2%Si无取向硅钢冷轧板组织、织构和磁性能的影响。试验结果表明,0.26%~0.81%Al含量时,随钢中Al含量的增加,成品退火钢板的晶粒尺寸增加同时铁损减少;当Al含量大于0.81%时,随Al含量增加,钢板的晶粒尺寸减小,同时铁损增加。Al含量对硅钢板磁感的影响没有明显的规律。2.2%Si无取向硅钢的合适Al含量为0.48%~0.81%。 The effect of 0.26%~0.95%Al content on structure,texture and magnetic performance of 0.5 mm cold rolled sheet of 2.2%Si non-oriented silicon steel has been studied by a 25 kg vacuum induction furnace smelting,and forging -rolling in laboratory.Results show that as 0.26%~0.81%Al,with increasing Al content in steel the grain size of annealed finished sheet increases while iron loss of sheet decreases,and as Al content in steel is more than 0.81%,the grain size of sheet decreases while iron loss in... 
2011-06-28 185 5.8

【作者】 张煜; 朱国辉; ...
2013-03-28 167 5.8

叠片系数是冷轧无取向电工钢的重要质量指标。为了提高叠片系数,必须保证无取向电工钢板形良好以及横向厚差小。针对攀钢冷轧厂4机架HC轧机轧制无取向电工钢的边部减薄问题,以无取向电工钢横向厚差最小作为目标函数,建立了一套针对无取向电工钢边部减薄控制的辊型曲线优化数学模型,开发了无取向电工钢专用辊型曲线,使无取向电工钢横向厚差从25μm降低到10μm以下,取得了良好的控制效果。 The lamination factor is an important quality index of non-oriented silicon steel strip.Considering the lamination factor,the non-oriented silicon steel must have a good shape and a smaller transverse thickness difference.In order to solve the edge thinning of non-oriented silicon steel strip in Panzhihua Steel,a mathematic model for designing the roll shape is built.In the model,the transverse thickness difference of non-oriented silicon steel strip is taken as the objective function.Based on t... 
2011-01-28 218 5.8

提出了一种基于爱泼斯坦方圈族(包括标准25cm爱泼斯坦方圈、缩比的17.5cm和20cm爱泼斯坦方圈)和二级加权处理方法对爱泼斯坦测试数据,包括有效磁路长度、比损耗、励磁功率,进行处理的晶粒取向电工钢磁性能扩展模拟方法。详细地考察了励磁频率、试样剪切角度和环境温度对爱泼斯坦方圈测量结果的影响。研究结果表明,利用本文提出的爱泼斯坦方圈组合以及二级加权处理技术,可以有效地建立取向电工钢损耗模拟模型,从而更加准确地确定了取向电工钢的损耗,改善并提高了爱泼斯坦磁性能测试数据的应用价值。 The extended modeling of the magnetic properties of GO(grain oriented) electrical steel is presented in this paper which is based on a set of standard and scaled-down Epstein frames and a proposed two-level weighted processing of Epstein data, including the mean magnetic path length, specific magnetization loss and exciting power. The effects of excitation frequency, strip angle and ambient temperature on the results obtained from the Epstein frames are investigated. It is shown that using the p... 
2014-09-28 178 5.8

【作者】 凌健; ...
2011-03-28 165 5.8

采用SEM、EDS和XRD对不同加热温度下W470连铸坯氧化铁皮的微观形貌及相结构进行研究。结果表明,W470氧化铁皮难以除去的原因是氧化铁皮熔化,液相包裹着FeO,凝固时发生共晶反应,生成FeO/Fe2SiO4共晶混合物,并深嵌入基体。降低加热炉的加热温度,使连铸坯全程在FeO/Fe2SiO4共晶混合物熔点(1177℃)以下加热,可降低氧化铁皮与基体的结合力,能够有效解决W470除鳞困难问题。 The microstructure and phase structure of iron scale of W470 continuous casting billet at different heating temperatures were investigated by SEM,EDS,and XRD.The results show that the reason why the iron scale of W470 removes hardly is that iron scale is melted and the FeO is surrounded by the liquid phase,which forms FeO / Fe2SiO4eutectic mixture and is embedded into the matrix after solidification.Lowering the heating temperature and keeping the continuous casting billet heating under the melt... 
2014-04-28 178 5.8

【作者】 刘玲月; 李军辉; ...
2011-02-28 176 5.8

对取向硅钢在不同气氛下的高温退火工艺进行实验室模拟,利用X射线衍射仪(XRD)分析了硅钢退火至900℃和1170℃时的样品表面氧化层和底层的物相组成,采用场发射扫描电镜(SEM)观察了样品表面氧化层和底层在截面方向上的微观形貌特征,并计算了高温退火一次升温阶段氧化反应的吉布斯自由能以及900℃时退火气氛的氧分压。结果表明:当退火气氛的露点温度保持一定时,较高的氢气含量有利于生成完整连续的底层;当退火气氛的水氢分压比保持一定时,在露点温度与氢气含量两者较低的条件下,底层附着性不佳易脱落,较高条件下,底层中夹杂着较多的铁单质;当氧化层中无FeO时,底层完整连续但易脱落,当FeO层较薄时,底层下方存在部分未反应的SiO2,当FeO层较厚时,底层不完整连续且有分层。 The high temperature annealing process of grain-oriented silicon steel in different atmospheres was simulated in the laboratory. X-ray diffractometer(XRD) was used to analyze the phase compositions of the surface oxide layer and forsterite film of the silicon steel annealed to 900 ℃ and 1170 ℃. Field-emission scanning electron microscopy(SEM) was used to observe the micro morphology characteristics of the surface oxide layer and forsterite film of the samples in the cross section direction. The ... 
2022-12-28 250 5.8

通过测试取向硅钢不同工艺条件下的碳含量,探讨了CGO取向硅钢碳含量控制的最优处理条件,研究了脱碳温度和脱碳时间对相同初始碳含量取向硅钢的脱碳效果的影响。结果表明,在气氛为(15%~20%)H2+(75%~80%)N2,炉压差为10~20 Pa的条件下,CGO取向硅钢合适的脱碳温度为1 073 K~1 123 K,脱碳时间为10~20 min。在该处理条件下,能取得较好的脱碳效果。 By means of testing carbon content of oriented silicon steel below the distinct technical conditions,inquires the excellent handle terms of carbon content controlling for CGO oriented silicon steel,studies effects of decarburization annealing temperature and decarburization annealing time to the oriented silicon steel decarburization efficiency in same initial carbon content.The results show that,under the condition of atmosphere(15% ~ 20%) H2+(75% ~ 80%)N2 and furnace pressure difference 10 ~ 2... 
2013-03-28 192 5.8

主要对硅钢退火炉耐材施工进行阐述,对一期工程与二期工程施工经验进行总结,包括设计、施工、耐材生产、人员素质等方面,指出了工程项目所所存在的不足,为同类型炉窑的施工提供借鉴。 This paper describes the construction of silicon steel annealing furnace refractories;and it was summarized the construction experience of phase-Ⅰ and phase-Ⅱ projects,including design,construction,refractory production,the quality of personnel etc,and pointed out the shortcomings of the project,which provided a reference for the construction of the same type of furnaces. 
2023-05-11 1.41k 5.8

针对节能电机对无取向电工钢在磁性能方面的特殊要求,采用普通W600牌号的热轧板为原料,通过大量的现场工艺试验,研究总结出了\"超低张力\"的运行工艺、\"先快后慢\"的加热工艺、\"先湿后干\"的退火脱碳工艺、\"先缓后急\"的冷却工艺,生产出P1.5/50≤4.0 W/kg、B50≥1.70 T的冷轧电工钢产品,满足了节能电机的要求。 Based on the special requirements of no-oriented electrical steel for saving energy motor in magnetic aspects,using common W600 brand of hot rolled plate as raw material,through a large number of real tests,an ultra-low tension process,heating process which was quick at first and then slow,annealing decarburization process which was dry after the first wet,and a cooling technology of \"slow after the first urgent\" were concluded.Electrical steel product with P1.5/50≤4.0W/kg,B50≥1.70T was produced... 
2014-08-28 174 5.8

针对硅钢连续生产线设备存在的故障、隐患以及精度等影响产品质量的问题进行分析及改造,实现保证生产线设备稳定运行、提高设备精度及硅钢产品质量的目的。 This paper analyzes and transforms the electrical equipment failures, risks existed in slicon continuous production line, and the effect of accuracy to product quality, in order to ensure stable operation of equipment in production line and improve the accuracy of device, quality of silicon. 
2014-04-28 171 5.8

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