钢厂
钙处理对无取向硅钢中非金属夹杂物的影响
采用电解法和扫描电镜研究了300 t转炉-RH精炼钙处理对无取向硅钢板（%:≤0.005C、1.2～2.2Si、0.2～0.6Mn、≤0.20P、≤0.005S、0.2～0.6Al、0～0.01Ca）中夹杂物的影响。结果表明,钢中Al含量为0.25%和0.35%时,钢中溶解氧均小于1×10-4%,钙处理后都会产生CaS夹杂物,尤其是含0.35%Al的钢水;钙处理可以有效减少钢中的夹杂物数量,尤其是0.5μm以下的微细夹杂物数量;钙处理后夹杂物的种类以AlN、CaS为主,同时还含有少量的氧化物夹杂物以及AlN-CaS复合夹杂物,尺寸主要为1.5～5.0μm。 The effect of 300 t converter-RH refining calcium treatment on inclusions in non-oriented silicon steel sheet （%:≤0.005C,1.2～2.2Si,0.2～0.6Mn,≤0.20P,≤0.005S,0.2～0.6A1,0～0.01Ca） has been studied by electrolysis and scanning electron microscope.Results show that with 0.25%and 0.35%Al content in steel,all the dissolved oxygen in liquid is less than 1×10-4%,and the CaS inclusions are produced after calcium treatment,especial for the liquid containing 0.35%Al;the amount of inclusions in ste...
Sn含量对高磁感取向硅钢热轧板织构的影响
实验室模拟薄板坯连铸连轧(TSCR)流程制造高磁感取向硅钢,借助电子背散射衍射(EBSD)技术对不同Sn含量的热轧板织构进行了研究。研究结果表明:不同Sn含量热轧板表层及次表层均为高斯织构、铜型织构及黄铜织构的混合织构,中心层为{100}面织构;Sn含量为0.1%时,热轧板表层及次表层高斯织构组分最多,取向密度最大,成品磁感最高,达到1.875 T。 Texture of grain oriented silicon steel hot rolled by thin slab casting and rolling process(TSCR) in laboratory with different Sn contents was analyzed by electron back-scattered diffraction(EBSD).The results show that the hot rolled slabs with different Sn contents have the same texture,i.e.,Goss,Copper and Brass.Specifically,the texture of core layer is {100};While the hot rolled slab with 0.10% Sn,the surface layer and subsurface layer have a sharpness Goss texture and the finished products h...
D21硅钢芯片冲压工艺分析及模具设计
变压器D21硅钢铁芯片采用冲压工艺生产。首先对其工艺进行了分析,确定了冲压方案。对产品进行了排样设计,计算了冲压力,确定了压力中心。然后,设计了单工序落料模具,完成了模具装配图。 D21 silicon steel chips for transformer are produced by stamping.First,its stamping process was analyzed and the scheme of the stamping process was determined.The product layout was designed,the punching pressure was calculated,the pressure center was determined.Then,the blanking die with single procedure was designed,the die assembly drawing was completed.
夹杂物尺寸及数量对无取向硅钢磁性能影响的主成分回归分析
采用扫描电镜、场发射扫描电镜、能谱仪等对50SW1300冷轧无取向硅钢中的夹杂物分不同尺寸区间进行数量统计,利用主成分回归分析法,即数据的标准化处理—主成分分析—回归分析—标准化的变量还原成原始变量—确定显著影响因素,综合分析夹杂物总量及各尺寸区间的夹杂物数量对无取向硅钢磁性能的影响。结果表明:主成分回归分析能够从夹杂物尺寸区间及数量的多个影响因素中提取主要的因素,定量研究其对磁性能的影响。分析表明,显著影响无取向硅钢铁损的夹杂物为100~500nm的AlN、AlN+MnS、MnS、Al2O3、AlN+Al2O3,而劣化磁感最明显的夹杂物尺寸区间为100~200nm。 Different size intervals of inclusions in cold rolled non-oriented silicon steel 50SW1300 were counted by scanning electron microscope(SEM),field emission scanning electron microscope(FESEM)and energy disperse spectroscopy(EDS).With principal component regression method:standardization for experimental data,principal component analysis,regression analysis,transform standardized variables into original variables,determination of significant factor,effects of the total number of inclusions and the...
400mm硅钢自动轧制试验轧机
西安重型机械研究所为武钢开发了目前国内第一台自动化水平较高的先进可靠的硅钢热轧试验轧机。本文介绍了该轧机的工艺参数、设备组成,技术特点及轧制流程,该轧机在规定的终轧温度范围内,实现了2.5 m/s的快速轧制速度,保证了控制系统准确及时的采集到轧件进出轧辊时的信号,缩短道次间隙时间,实现了自动控制,保证了产品板形及精度的高水平要求,对于硅钢尤其是对其取向硅钢新产品、新工艺的开发具有深远意义。 An experimental prototype of 400 mm silicon steel hot rolling mill was developed by Xi’an Heavy Machinery Research Institue for Wu Gang.The technological parameters,configuration and characteristic of advanced control system in the experimental prototype are introduced in detail.The experimental prototype was realized the fast rolling of 2.5 m/s in the range of specified rolling temperature.Its automatic rolling control system can acquisite the signals that a rolled piece enters in and exits fro...
温度及扩散时间对CVD法制备高硅钢的影响
采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r...
