基于GTN损伤模型对含边部缺陷硅钢薄板冷轧时边裂的预测
采用拉伸试验和显微组织观测的方法确定了GTN损伤模型中的9个损伤参数,运用GTN损伤模型对冷轧硅钢薄板边部缺陷的扩展及边裂的产生进行了有限元模拟,并与预置缺口的钢板轧制试验进行对比。结果表明:轧制过程中边部缺陷是造成钢板边部裂纹萌生和扩展的一个重要原因,GTN损伤模型可用来预测含边部缺陷硅钢薄板在冷轧过程中边裂的产生;预测结果与试验结果基本一致。 The crack initiation and propagation of silicon steel strip with edge defect during cold rolling process was studied by using GTN damage model in this paper.Nine damage parameters in GTN model were identified by tensile testing and microstructure observing,and then the FE simulation of edge defect evolution of silicon steel strip during rolling process was conducted on the base of GTN damage model,and then the results were compared with rolling experimental results.The results show that the edge...
RH精炼喂CaSi线去除无取向硅钢中的非金属夹杂物
结合工业化生产的无取向硅钢,进行了RH精炼喂CaSi线去除钢中的非金属夹杂物试验研究。针对不同的钙处理条件,分析了CaS夹杂生成热力学,观察了夹杂物的形貌和尺寸分布,确定了夹杂物的类型、数量,探讨了钙处理后钢中夹杂物的变化规律。结果表明,本试验条件下,钙处理可以有效抑制MnS、AlN夹杂物的生成,有效促进钢中微细夹杂物的聚合、上浮、去除,钢质纯净度明显提高。经过合适的钙处理后,钢中的夹杂物以独立存在的CaO为主,同时有少量含CaO、SiO2、MgO的复合夹杂,没有发现CaS夹杂存在。这部分夹杂物的尺寸集中分布在2～20μm,数量约为1.8×105个/mm3。 Experimental study on removal of non-metallic inclusions in non-oriented silicon steel obtained from industrial production by CaSi wire feeding during RH refining process was carried out.The thermodynamics of CaS inclusion formation was analyzed,the morphology and the size distribution of inclusions were observed,and the numbers and types of inclusions were also determined for the steel specimens treated under different calcium treatment conditions.Furthermore,the variation of inclusion characte...
温度及扩散时间对CVD法制备高硅钢的影响
采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r...
