钢厂
硅钢氧化镁的制备进展
介绍了硅钢氧化镁制备方法及高质量硅钢氧化镁制备技术的研究进展,并对利用我国丰富的卤水资源制备硅钢氧化镁进行了展望。 The preparation methods of silicon steel magnesium oxide and research progress of high quality silicon steel magnesium oxide preparation technology were introduced.The use of abundant brine resources in the preparation of silicon steel magnesium oxide was prospected.
无取向电工钢织构的演变及其沿带钢宽度方向上的差异
采用EBSD检测技术,分析了50W800无取向电工钢在重要生产工序间织构的演变以及织构沿带钢宽度方向上的差异性。结果表明:热轧板织构沿带钢宽度方向上的差异性主要体现在表层织构。带钢边部表层织构主要由旋转立方织构、α纤维织构以及少量的γ纤维织构组成,带钢宽度1/4处的表层织构主要存在高斯织构,带钢宽度1/2处的表层织构主要为(110)面织构以及少量的铜型织构。各处的带钢宽度1/4处和1/2处的织构类型基本一致,都以α纤维织构和旋转立方织构为主。冷轧后,各处的表层织构类型差异较小,均为γ纤维织构和α纤维织构。由板宽边部至中心处织构强度值逐渐降低。退火后,各处织构的组分基本一致,为较强的γ纤维织构和较弱的(100)面织构。各处织构强度值差异较小,变化趋势与冷轧板一致。 The texture of non-oriented electrical steel 50W800 was detected by EBSD technique.The evolution of the texture between important processes and the difference of texture along the width direction of strip were analyzed.The result shows that the difference along the width direction of strip of texture at the surface of hot rolled plate is most obvious.The texture at the surface of strip edge is primarily made of rotating cube texture,αfiber texture and weakγfiber texture.Goss texture is mainly co...
无取向电工钢孔洞缺陷控制实践
针对马钢无取向电工钢孔洞缺陷的分布规律及形貌特征,对缺陷样进行了显微分析,并利用生产实绩数据分析了该缺陷产生的原因。结合热轧生产过程,主要通过避免带钢撞击导卫以及降低导卫结瘤的产生等措施,可有效抑制热卷异物压入产生,从而降低冷轧工序孔洞的产生。 In viewing of the distribution and morphology characteristics of the hole defect of non-oriented electrical steel in Maanshan Iron and Steel Co.,Ltd.,the causes of the defect were analyzed by micro analysis of the defect sample and the production data.Combined with the production process of hot rolling,by avoiding the impact of strip steel on the guide and reducing the nodule formation on the guide,the pressing of foreign bodies in hot coiling could be effectively suppressed,thus reducing the fo...
普通冷轧取向硅钢中间完全脱碳退火工艺的确定
为了确定普通冷轧取向硅钢最优的中间完全脱碳退火工艺,在其一次冷轧后进行5种不同工艺的脱碳退火处理,借助扫描电镜及电子背散射衍射技术研究了不同工艺脱碳退火后的组织、织构和脱碳效果。结果表明:经5种工艺脱碳退火处理后,初次再结晶的平均晶粒尺寸均约为19μm,且不随退火温度和时间的变化而变化;经840℃×10min工艺退火后的晶粒最均匀,高斯织构位向更准确,高斯织构面积分数最多,为3.1%,可将碳脱至0.003 5%。 In order to determine the optimal intermediate complete decarburizing annealing processes for common grain-oriented(CGO)silicon steel,five kinds of intermediate decarburizing annealing processes were conducted,the microstructure,texture and decarbonization after different decarburizing annealing processes were studied by scanning electron microscopy and electro back-scattered diffraction(EBSD)technology.The results show that the average grains sizes of primary recrystallization were about 19μm a...
水氯镁石制备硅钢级氧化镁
以水氯镁石为原料,采用氨法沉镁-煅烧-添加剂的方法制备硅钢级氧化镁。考察了反应温度、反应pH值、陈化时间对中间体氢氧化镁纯度及转化率的影响;研究了煅烧温度和煅烧时间对氧化镁水化率的影响及添加剂的量对氧化镁悬浮性能的影响。控制实验条件为:反应温度55℃,pH值为9.5,陈化时间2h,煅烧温度1050℃,煅烧时间2h,添加剂量为0.8%,制得氧化镁的纯度为98.99%、水化率为2.92%、悬浮性能为3mm/h,达到硅钢级氧化镁的要求。 Using bischofite as raw material,the preparation of magnesium oxide with silico-steel grade was studied.The effects of reaction temperature,reaction pH value and aging time on the intermediate magnesium hydroxide purity and conversion rate were studied.Calcinations temperature,calcinations time relationship to the hydration rate of MgO and amount of additive to the suspension performance of MgO were investigated.The results indicated that the optimum technological conditions were as follows:reac...
脉冲磁场热处理对CGO取向硅钢脱碳退火过程中组织和织构的影响
采用自主研发的脉冲磁场退火装置,在取向硅钢脱碳退火过程中分别施加不同强度的磁场,并采用光学显微镜和X射线衍射仪研究了脉冲磁场脱碳退火后试样的显微组织和宏观织构。结果表明,脱碳退火过程中施加脉冲磁场后取向硅钢的平均晶粒尺寸均增加,当磁场强度为40 mT时,平均晶粒尺寸最大,为13.06μm。此外,取向硅钢试样的立方织构{001}<100>强度减弱,高斯织构{110}<001>和{111}<112>织构增强,有利于获得更好的成品织构和磁性能。 Self-developed pulsed magnetic field annealing device was used to apply magnetic field of different intensities during decarburization annealing of an oriented silicon steel, and microstructure and macro-texture of the specimens after decarburization annealing in a pulsed magnetic field were studied by using optical microscope and X-ray diffractometer. The results show that the average grain size of the oriented silicon steel increases with the application of pulsed magnetic field during decarbu...
获得抑制剂法生产低温高磁感取向硅钢的抑制剂控制研究进展
综述了国内外大钢铁企业与研究机构采用获得抑制剂法生产低温高磁感取向硅钢的开发及应用情况,分析了以该法生产高磁感取向硅钢过程中抑制剂的控制技术,包括固有抑制剂组成方案、气态渗氮方式与工艺及高温退火工艺的制定.研究表明,固有抑制剂组成方案的设计思路大体一致,化合物抑制剂以AlN为主、硫化物为辅,同时添加少量Sn,Sb等单元素抑制剂,但组成元素含量存在一定差别;在脱碳退火后用NH3进行非平衡渗氮处理已成为气态渗氮的主要方式,但最佳方式仍未明确,具体选择需依据实际生产条件,相应脱碳及渗氮工艺的控制条件差别较大;高温退火工艺中升温制度差别不大,升温阶段退火气氛中N2含量的选择存在差别.此外,分析了抑制剂控制技术目前存在的关键问题,并指出了进一步的研究方向. The current application and exploitation on production of low-temperature high magnetic induction grain-oriented silicon steel with acquired inhibitor method at both iron and steel enterprises and research institutions in the world are reviewed. The control techniques of inhibitors, which include the composition design for inherent inhibitors, nitriding method and process, and secondary recrystallization annealing, are thoroughly analyzed and proposed. It is indicated that the design ideas for i...
温度及扩散时间对CVD法制备高硅钢的影响
采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r...
稀土铈含量对1.2%Si无取向电工钢组织、织构及磁性能的影响
在实验室模拟CSP流程制备了不同含量稀土铈(质量分数0~0.018%)的1.2%Si无取向电工钢,并对其进行1 000℃×5min的再结晶退火处理,研究了铈质量分数对无取向电工钢夹杂物、显微组织、再结晶织构和磁性能的影响。结果表明:随着铈质量分数的增加,微细夹杂物数量、再结晶晶粒尺寸、{100}和{110}织构组分、磁感应强度先增后减,{111}织构组分、铁损先减后增;铈的质量分数为0.005 1%时,钢中的夹杂物数量最少,再结晶晶粒尺寸最大,有利织构最多,磁性能最优,铁损P15/50为3.253W·kg-1,磁感应强度B50为1.751T。 Non-oriented electrical steels containing different contents rare earth Ce element(0-0.018wt%) were prepared in the laboratory by simulated CSP(compact strip production)process,and then recrystallization annealing at 1 000 ℃ for 5 min were performed,the effects of Ce content on inclusion,microstructure, recrystallization texture and magnetic properties of non-oriented electrical steels were studied.The results show that with the increase of Ce content,the amounts of fine inclusion,the size of re...
高强无取向硅钢组织演变与强化机制
针对新能源汽车的发展,制备了含Ni固溶强化、含Cu析出强化以及含Ni+Cu复合强化3%Si无取向硅钢,研究了强化方式对无取向硅钢组织、织构和性能的影响。结果表明:固溶强化型无取向硅钢热轧板中形成了粗大{221}<221>晶粒,冷轧过程中剪切变形明显并在退火后形成良好再结晶织构。析出强化型无取向硅钢热轧板中心层形成γ取向粗大晶粒,在后续的加工中γ织构逐渐增强并最终得到相对细小的再结晶晶粒。复合强化型无取向硅钢热轧板中保留了强λ取向带状组织,退火后形成了有益的Goss织构和λ织构。固溶强化型与复合强化型无取向硅钢磁感应强度B50分别达到1.742、1.688 T,高于析出强化型无取向硅钢的1.645 T。同时,复合强化型无取向硅钢高频铁损最低,其P1.0/400和P1.0/1 000分别低至20.97、82.69 W/kg,这与其较小的晶粒尺寸和织构改善有关。强度计算结果表明:Ni元素固溶强化对强度的提高有限,屈服强度为468 MPa,纳米Cu析出可显著提高屈服强度(强度增量约200 MPa),且主要来自于模量强... For the development of new energy vehicles, 3%Si non-oriented silicon steel were processed by solid solution strengthening with Ni, precipitation strengthening with Cu, and composite strengthening with Ni and Cu. The effects of different strengthening methods on the microstructure, texture and properties of high-strength non oriented silicon steel were studied.The results show that coarse {221}<221> grains are formed in the hot rolled sheet of solution strengthened non-oriented silicon ste...
大压下率冷轧无取向硅钢再结晶织构演变
研究了冷轧95%变形量无取向硅钢不同退火温度(710~1 050℃)下再结晶织构特征.再结晶刚完成时(710℃退火),呈现强γ({111<112>~<134>)与弱{114}<481>织构特征;随退火温度升高至900℃,γ明显减弱,{114}<481>组分持续增强,形成典型的{h,1,1}<1/h,1,2>织构;进一步升温至1 050℃,再结晶织构不再发生明显变化.基于EBSD分析,{114}<481>组分的持续强化可归因于其明显的尺寸优势以及较高频率的高能晶界(取向差角为20°~45°). A non-oriented silicon steel was heavily rolled to 95% reduction and subsequently annealed at 710~1 050 ℃ to investigate recrystallization texture evolution.When annealed at 710 ℃ with complete recrystallization,the texture is characterized by a strong partial γ fiber spreading from {111}<112> to {111}<134> and a weak {114}<481> component.As annealing at 900 ℃,γ fiber is decreased significantly while {114}<481> is increased consistently,producing a typical {h,1,1}<1/h,...

