硅钢资料

对高牌号无取向电工钢国内生产情况、工艺技术、产品性能及应用领域等进行了阐述,并探讨了高牌号无取向电工钢产品的发展趋势。 This paper introduces basic facts on the production status,process technology and products’ properties and their applications of non-oriented electrical steel with high grade at home,and then discusses the development trend on technology for producing the non-oriented electrical steel with high grade. 

冷轧无取向硅钢是高技术含量、高附加值产品,工艺复杂,生产周期长,过程控制难度大,被誉为钢铁产品中的\"工艺品\"。热轧生产工艺又是无取向硅钢生产的重中之重,直接决定了硅钢的铁损和电磁性等多项指标。 Cold rolled non-oriented silicon steel is high technology content、high addedvalue product. Its process is complex, Its production cycle is of Length, and Its Process control is difficult. Which is known as the iron and steel products \" Arts and crafts\". Hot rolling production process is the top priority of non-oriented silicon steel, Which Directly determines iron loss of the silicon steel and electromagnetic property, etc many index. 

以构建高磁感、低铁损、免轧制高硅电工钢铁芯为出发点,提出采用单辊甩带制备非晶铁硅合金薄带、微氧化法在铁硅合金粉末表面包覆高电阻率铁硅氧化物薄膜制备核壳异质结构高硅电工钢纳米粉末、放电等离子烧结快速成形制备颗粒间绝缘的高硅电工钢铁芯。研究了不同氧化包覆时间对SPS烧结试样密度、物相组成、微观结构和静磁性能的影响。研究表明,在氧化包覆5h烧结温度800℃工艺条件下,制备的6.5%Si高硅电工钢铁芯的静磁性能最佳,饱和磁化强度为128.84A.m2/kg、矫顽力为2.25kA/m、剩磁为3.47A.m2/kg。其饱和磁化强度与粉末压延法制备的高硅钢相当,但矫顽力降低了1/3。 The paper takes preparation 6.5%Si steel with high induction,low core loss and removing rolling as the starting point,amorphous Fe-Si ribbons was synthesized by melt spinning method,6.5%Si steel nanopowders with high resietivity core shell structure was prepared by the slight oxidation process and 6.5% Si steel iron core with evaluating internal was sintered by spark plasma sintering process(SPS).The essay focuses studies the effects of different oxidation cladding time on sample density,phase c... 

采用CVD法制备6.5%Si高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。结果表明:在CVD反应过程中,反应温度高于1050℃将大大提高渗硅速率,但当温度大于1200℃后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在1200℃左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足Δw表-中/b≤5的时间为适宜的扩散时间。 6.5%Si high silicon steel was manufactured by using CVD method and the process was introduced,the influence of temperature on the siliconizing rate and quality reducing rate,diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃,but the siliconizing rate will become steadily as the temperature up to 1200 ℃;The quality reducing rate will increase with the elevating of temperature and the r...