硅钢资料

为研究退火工艺对普通取向硅钢初次再结晶组织的影响,对经不同温度、保温时间和升温速率退火后的材料组织进行了分析。结果表明:在等温退火条件下,加热至600℃时开始发生初次再结晶,800℃以上初次再结晶组织发展完善;而在最终冷轧板直接进行最终高温退火的情况下,加热温度在500～700℃时,将升温速率提高到80℃/h,初次再结晶组织更易于发展完善。 To investigate the influence of annealing process on the recrystallization of common grain oriented silicon steel,microstructures of sheets annealed at different temperature,soaking time and heating rate are observed.Results show that under the condition of isothermal annealing,recrystallization begins at 600℃ and fully develops above 800℃,while in the case that the final cold rolled sheets are directly thrown to final high temperature annealing,recrystallization is likely to develop with the he... 

【作者】 刘玲月； 李军辉； ...

本文以热轧常化板为初始材料,采用二次冷轧法与三次冷轧法制备了0.1 mm厚的取向硅钢薄带,测定相应的磁性能,并通过EBSD取向成像技术检测了二次冷轧法与三次冷轧法各工艺过程中织构与组织演变规律。结果表明,采用最终冷轧压下率适中的三次冷轧法,能在冷轧至0.1 mm时保存较多的高斯晶核,使得高温退火后的磁性能明显优于二次冷轧法。最终冷轧压下率通过影响脱碳退火后样品中的{111}<112>织构组分及Goss晶粒数量对最终二次再结晶产生重要影响。 Grain-oriented silicon steel sheets with a thickness of 0. 1 mm were produced from hot-rolled and normalized sheets by two-step-rolling and three-step-rolling methods. Their magnetic properties were measured,and the textures were detected by EBSD technique. The results show that the three-step-rolling method,which has a moderate reduction rate of final cold rolling,can maintain more { 110} < 001 >nucleus,and thus obtaining better magnetic properties compared with the two-step-method. The f... 

试验了通过NaCl-KCl-NaF-SiO₂熔盐在电流密度50 mA/cm²、电沉积脉冲电流正反向比9:1和750⁸50℃60min电沉积下阴极（/mm）20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布,并通过计算得出Si的扩散系数。结果表明,电沉积温度由750℃提高至850℃时,试样中Si含量增加,扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。 The distribution of silicon at cross section of cathode（/mm） 20 × 20 × 0.5 sheet of 1.6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO₂ molten salt with current intensity 50 mA/cm²,electro-deposit pulse current positive-negative ratio 9:1 at 750 850 ℃ for 60 min has been tested and the diffusion coefficient of Si is obtained by calculation.Results show that with increasing electro-deposit temperature from 750 ℃ to 85...