硅钢资料

以轻烧氧化镁粉为原料,经消化、碳化制得重镁水,在热解反应前采用络合剂对重镁水中的杂质钙、铁进行络合掩蔽,再经热解得到碱式碳酸镁,碱式碳酸镁经煅烧可制得钙、铁杂质含量较低的氧化镁。在重镁水络合除杂过程中,考察了络合剂三乙醇胺、柠檬酸、草酸单独和复合使用的除铁、除钙效果。以三乙醇胺为络合剂时,在200 mL重镁水中加10 mL三乙醇胺(1∶1),氧化镁产品中w(氧化镁)=99.3%、w(氧化钙)=0.31%、w(氧化铁)=0.042%;使用草酸和柠檬酸作为复合络合剂时,在200 mL重镁水中加入1.0 g柠檬酸和2.0 g草酸,氧化镁产品中w(氧化镁)=98.2%、w(氧化钙)=0.24%、w(氧化铁)=0.030%。 Light-burned magnesia as a raw material was hydrated and carbonated to obtain magnesium bicarbonate liquor.Before the pyrolyzing of magnesium bicarbonate liquor,complexants were used to cover Fe and Ca impurities.Then the treated liquid was pyrolyzed to obtain basic magnesium carbonate which was calcined to magnesium oxide with low calcium and iron content.During the complexing purification of magnesium bicarbonate liquor,the Fe and Ca removing effects of single or compound complexing agents,suc... 

变压器D21硅钢铁芯片采用冲压工艺生产。首先对其工艺进行了分析,确定了冲压方案。对产品进行了排样设计,计算了冲压力,确定了压力中心。然后,设计了单工序落料模具,完成了模具装配图。 D21 silicon steel chips for transformer are produced by stamping.First,its stamping process was analyzed and the scheme of the stamping process was determined.The product layout was designed,the punching pressure was calculated,the pressure center was determined.Then,the blanking die with single procedure was designed,the die assembly drawing was completed. 

试验了通过NaCl-KCl-NaF-SiO₂熔盐在电流密度50 mA/cm²、电沉积脉冲电流正反向比9:1和750⁸50℃60min电沉积下阴极（/mm）20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布,并通过计算得出Si的扩散系数。结果表明,电沉积温度由750℃提高至850℃时,试样中Si含量增加,扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。 The distribution of silicon at cross section of cathode（/mm） 20 × 20 × 0.5 sheet of 1.6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO₂ molten salt with current intensity 50 mA/cm²,electro-deposit pulse current positive-negative ratio 9:1 at 750 850 ℃ for 60 min has been tested and the diffusion coefficient of Si is obtained by calculation.Results show that with increasing electro-deposit temperature from 750 ℃ to 85... 

研究了冷轧95%变形量无取向硅钢不同退火温度(710～1 050℃)下再结晶织构特征.再结晶刚完成时(710℃退火),呈现强γ({111<112>～<134>)与弱{114}<481>织构特征;随退火温度升高至900℃,γ明显减弱,{114}<481>组分持续增强,形成典型的{h,1,1}<1/h,1,2>织构;进一步升温至1 050℃,再结晶织构不再发生明显变化.基于EBSD分析,{114}<481>组分的持续强化可归因于其明显的尺寸优势以及较高频率的高能晶界(取向差角为20°～45°). A non-oriented silicon steel was heavily rolled to 95% reduction and subsequently annealed at 710~1 050 ℃ to investigate recrystallization texture evolution.When annealed at 710 ℃ with complete recrystallization,the texture is characterized by a strong partial γ fiber spreading from {111}<112> to {111}<134> and a weak {114}<481> component.As annealing at 900 ℃,γ fiber is decreased significantly while {114}<481> is increased consistently,producing a typical {h,1,1}<1/h,...