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【摘要】 <正>日前,宝钢自主研发的新型高磁感取向...
2023-05-16 314 5.8

研究表明,硅钢中的夹杂物对成品带钢的磁性能有显著影响。为研究冶炼过程硅钢中的夹杂物遗传变化,进而提出更有效的控制措施加以去除,本文结合典型的无取向硅钢生产炉次,采用非水溶液电解提取+扫描电镜观察方法分析冶炼过程中上述炉次典型试样的夹杂物。结果表明:转炉冶炼结束、RH精炼开始时,钢的氧化物夹杂总量最大,约为0.23%;RH精炼过程中,氧化物夹杂总量不断降低,并在脱碳结束时达到最低,约为0.02%;连铸过程中,氧化物夹杂总量仍有不断降低趋势,但夹杂物的平均尺寸变化不大。本试验条件下,中间包试样的夹杂物数量约为1.59×104个/mm3。 As we all know, the non-metallic inclusion effects magnetic properties of silicon steel sheets obviously. The article aims to study the heredity of non-metallic inclusion in non-oriented silicon steels during the steel making process, and then provides a more effective controlling measure to remove the inclusions. Based on the typical non-oriented silicon steel charges, the non-aqueous solution extraction and SEM observation were adopted to analyze the non-metallic inclusions. Results show that,... 
2014-05-28 189 5.8

主要研究了氧化锌对以Al(H2PO4)3为基料的无铬无取向硅钢绝缘涂层各项性能的影响.用盐雾实验和动电位极化研究了不同氧化锌含量对硅钢绝缘涂层的耐蚀性和电化学行为的影响.采用SEM和体视显微镜对涂层的表面形貌和附着性能进行研究.结果表明,氧化锌含量为4.0%时,氧化锌能完全中和涂层表面的游离磷酸,涂层的耐蚀性和附着性最好;氧化锌含量过少或过多时,涂层的耐蚀性和附着性都较差. This paper studies the influence of zinc oxide on the performance of chromium-free non-oriented silicon steel insulating coating which based on aluminum dihydrogen phosphate.Salt spray experiment and potentiodynamic polarization were used to study the influence of zinc oxide content on the corrosion resistance and electrochemical behavior of the insulation coating of silicon steel.The surface morphology and adhesion of coating were tested by SEM and stereo microscope.The results show that when t... 
2013-03-28 190 5.8

试验了通过NaCl-KCl-NaF-SiO2熔盐在电流密度50 mA/cm2、电沉积脉冲电流正反向比9:1和750850℃60min电沉积下阴极(/mm)20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布,并通过计算得出Si的扩散系数。结果表明,电沉积温度由750℃提高至850℃时,试样中Si含量增加,扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。 The distribution of silicon at cross section of cathode(/mm) 20 × 20 × 0.5 sheet of 1.6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO2 molten salt with current intensity 50 mA/cm2,electro-deposit pulse current positive-negative ratio 9:1 at 750 850 ℃ for 60 min has been tested and the diffusion coefficient of Si is obtained by calculation.Results show that with increasing electro-deposit temperature from 750 ℃ to 85... 
2014-06-28 211 5.8

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